200703142-3 a d v a n ced p o w e r electr on i cs c o r p . 1/6 ap 9 973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v v gs i d a i d a i dm d at t a =2 5 c w / c t stg t j symbol value unit parameter rating gate-source voltage + continuous drain curren t 3 continuous drain curren t 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s bv 6 0v low gate charge r 8 0m w simple drive requirement supports 4 .5v logic-level gate drive rohs-compliant i 1 4 a g d s to-263 (s) g d s to-220 (p) drain-source voltage 6 0 20 v at t =2 5 c 1 4 a at t = 10 0 c 9 a 4 0 a p total power dissipation 27 w linear derating factor 0. 22 62 c/w 4.5 c /w o rdering information AP9973GS-3tr rohs-compliant to-263 shipped on tape and reel (800 pcs/reel) ap9973gp-3tb rohs-compliant to-220 shipped in tubes the AP9973GS-3 is in the to-263 package which is widely preferred for commercial and industrial surface mount applications such as medium-power dc/dc converters. the through-hole to-220 version (ap9973gp-3) is available where a small pcb footprint is required. rthj-c maximum thermal resistance, junction-case rthj-a maximum thermal resistance, junction-ambient
a d v a n ced p o w e r electr on i cs c o r p . 2/6 ap9973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v d b v dss / d t j breakdown voltage temperature coefficient reference to 2 5 c , i d =1ma - 0.05 - v/c r ds(on) static drain-source on-resistanc e 2 v g s = 10v, i d = 9a - - 80 mw v g s = 4.5v, i d = 6a - - 100 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 8.6 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d = 9a - 8 13 nc q gs gate-source charge v ds =48v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =30v - 7 - ns t r rise time i d = 9a - 15 - ns t d(off) turn-off delay time r g =3. 3 w , v g s = 10v - 16 - ns t f fall time r d = 3.3w - 3 - ns c iss input capacitance v gs =0v - 720 1150 pf c oss output capacitance v ds =25v - 77 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s = 14a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s = 9a, v gs =0 v - 28 - ns q rr reverse recovery charge di/dt=100a/s - 27 - nc notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
a d v a n ced p o w e r electr on i cs c o r p . 3/6 ap9973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 5 10 15 20 25 30 35 40 45 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t c =25 o c 10v 7.0v 5.0v 4.5v 0 4 8 12 16 20 24 28 32 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 65 70 75 80 85 90 35791 1 v gs , gate-to-source voltage (v) r ds(on) (m w ) i d =9a t c =25 o c 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =9a 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
a d v a n ced p o w e r electr on i cs c o r p . 4/6 ap9973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge typical electrical characteristics (cont.) 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 30v v ds =38v v ds =48v i d =9a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s dc
a d v a n ced p o w e r electr on i cs c o r p . 5/6 ap9973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap9973 gp = rohs-compliant to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 2.54 ref. 7.4 ref. symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 9973gp ywwsss f l5 e d1
a d v a n ced p o w e r electr on i cs c o r p . 6/6 ap9973gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap9973 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. symbols
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